| PART |
Description |
Maker |
| CBR06C910FAGAC |
CBR-SMD RF C0G, Ceramic, High Q, 91 pF, 1%, 250 V, 0603, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR06C180F5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 18 pF, 1%, 50 V, 0603, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR06C110F5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 11 pF, 1%, 50 V, 0603, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| HVC |
PC SMD 105°C Very Low ESR High Ripple Current 2.000h Lifetime(Polymer SMD)
|
Jianghai Europe GmbH
|
| CBR04C109B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 1 pF, /-0.1 pF, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR04C259B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 2.5 pF, /-0.1 pF, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR04C319B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 3.1 pF, /-0.1 pF, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CT1008HQF CT1008HQF-10NG CT1008HQF-10NJ CT1008HQF- |
1 ELEMENT, 0.056 uH, GENERAL PURPOSE INDUCTOR, SMD
SMD Wire-wound Chip Inductors - High Q
|
http://
Central Technologies
|
| HPM |
PC SMD 105∑C Ultra Low ESR High Ripple Current 2.000h Miniaturized(Polymer SMD)
|
Jianghai Europe GmbH
|
| HFM306 HFM308 HFM301 HFM305 |
SMD, High Efficient Rectifier, 600V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 1000V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 50V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 400V, 3A, Silicon Diode
|
Rectron Semiconductor
|
| CZTA42 CZTA92 |
SMD Small Signal Transistor PNP High Voltage
SMD Small Signal Transistor NPN High Voltage
SURFACE MOUNT COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
|
